Micron Technology recently unveiled 176-layer, triple-level-cell (TLC), 3D NAND flash memory with a 30% smaller die size that employs a new replacement-gate (RG) NAND technology. The chips offer a 35% read/write latency improvement as well as a 33% increase in transfer rate, which is now 1600 Mtransfers/s. Show
The chips are actually built from a pair of 88-layer stacks. When making a 176-layer stack, the challenge is the difficulty in ensuring uniform construction up and down the stack. The latest chips follow on the heels of the 128-layer device from Micron, which also employed 3D NAND and 64-layer stacks. The challenge that RG NAND addresses is the capacitance between cells (Fig. 1). The RG NAND architecture employs a single insulator structure that minimizes the capacitance between cells to almost zero. Each TLC stores three bits of data.  1. The current NAND cells have additional capacitance between cells (left), whereas the RG cells (right) use a single insulator for the stack, so there’s almost no additional capacitance between the cells. The change to RG NAND improves write endurance and power efficiency while the smaller size boosts overall capacity. Write speed is faster, too, at almost twice that of conventional NAND because the ramp time for programming is reduced by the lower capacitance levels. RG NAND also allows the voltage threshold saturation to be increased so that a cell can hold a larger charge. With 3D RG NAND, a wider pillar can be built that’s more stable; therefore, more layers can be used in a stack (Fig. 2). The memory stack only contains storage elements as Micron utilizes a CMOS-under-the-array (CUA) approach. This puts the management logic on the bottom layer of the chip with memory layers built on top of it. 3D NAND flash stacks memory cells vertically in multiple layers, achieving a higher density than traditional NAND memory. It can be used in the same situations as traditional NAND and has a number of advantages over hard disk and tape storage. So, why hasn't 3D NAND technology taken over the role of traditional, planar NAND? The last few years have been tumultuous for NAND flash. Last year, a lengthy NAND flash shortage drove up SSD costs and slowed the transition to 3D NAND technology. 3D NAND is a denser, faster option than traditional NAND, but high manufacturing costs and complexity have extended the transition from older NAND technology. The precise chip manufacturing process of 3D NAND requires a substantial investment from vendors and can make production a lengthy and delayed process. Luckily, the shortage has ended, and the technology appears to be thriving. Vendor investment and interest have paid off, with a number of flash memory companies announcing NAND flash products and expressing enthusiasm for the future of 3D NAND. The question now appears to be less about whether an organization should consider 3D NAND, but where does it work best? In this guide, we'll take a look at the best applications for 3D NAND, the intricacies of NAND flash technology and what's available. We'll also examine the future of 3D NAND and what role it will play in the data center of tomorrow. If you're new to 3D NAND technology, take a look at our glossary at the end of the guide for a quick introduction to some key terms. 13D NAND updates and developmentsThanks to the bump in interest in 3D NAND technology, flash memory vendors are getting into the market. See what vendors, such as Intel and Micron, are offering to meet demand for 3D NAND technology.
After a tough year, the NAND flash shortage of 2017 appears to be over. So, what's next? Technology is constantly developing, and there will always be stiff competition in the market. But thanks to durability, technological advances and vendor investment, 3D NAND flash may be here to stay. What is 6464-layer TLC 3D NAND technology with CMOS under Array technology doubles the storage density of previous generation TLC 3D NAND while maintaining the same package size. Micron’s new 64L TLC 3D NAND products are 50% faster than previous generation TLC 3D NAND. Why is micron 64l TLC 3D NAND better than eMMC 5.1?Micron’s new 64L TLC 3D NAND products are 50% faster than previous generation TLC 3D NAND. Delivers 200% higher bandwidth versus e.MMC 5.1; uses Command Queue technology to read and write commands simultaneously. Our TLC 3D NAND uses a peak power management system to significantly reduce the memory peak power consumption in smartphones. What is TLC 3D NAND?Our TLC 3D NAND uses a peak power management system to significantly reduce the memory peak power consumption in smartphones. 2 Floating gate technology uses isolated charge storage nodes for superior cell-to-cell charge isolation, delivering higher data retention and reliability. What is the difference between floating gate and Micron mobile TLC 3D NAND memory?2 Floating gate technology uses isolated charge storage nodes for superior cell-to-cell charge isolation, delivering higher data retention and reliability. Micron mobile TLC 3D NAND memory technology delivers the speed and features that modern smartphones require, with high storage capacity and fast performance. |
